Силовой модуль IGBT SKM75GB123D

6550,00 ₽

Артикул: ac19f519edc2 Категории: , ,

      Описание

      IGBT MODULE, DUAL
      Transistor Type IGBT Module
      Transistor Polarity N Channel
      Voltage, Vces 1200V
      Current Ic Continuous a Max 75A
      Voltage, Vce Sat Max 3.2V
      Case Style SEMITRANS 2
      Termination Type Screw
      Collector-to-Emitter Breakdown Voltage 1200V
      Current Ic Continuous b Max 50A
      Current Ic av 78A
      Current, Icm Pulsed 150A
      External Depth 34mm
      External Length / Height 29.5mm
      Fixing Centres 80mm
      Fixing Hole Diameter 6.4mm
      Power, Pd 400W
      Power, Ptot 400W
      Temperature, Current 25 C
      Time, Rise 56ns
      Transistors, No. of 2
      Width, External 94mm